Erratum: A technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy [Appl. Phys. Lett. 4 0, 239 (1982)]
- 15 June 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (12) , 1046
- https://doi.org/10.1063/1.93289
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