Low-temperature growth of ZnSe by molecular beam epitaxy using cracked selenium

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Abstract
The growth of zinc selenide by molecular beam epitaxy using a cracked selenium source is studied. It is found that high quality growth can be achieved at substantially lower substrate temperatures than has been possible using uncracked selenium sources. It is determined from reflection high-energy electron diffraction observations that the use of cracked selenium produces growth dominated by a two-dimensional mechanism at substrate temperatures as low as 225 °C and that exposure of the GaAs substrate to cracked selenium prior to the initiation of growth has a substantial effect on the GaAs substrate and the early stages of ZnSe growth.