Production and annealing of ion-bombardment damage in silicides of Pt, Pd, and Ni
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2) , 940-942
- https://doi.org/10.1063/1.330564
Abstract
Sheet resistance measurements on polycrystalline films of seven transition-metal silicides have been used to study the production of damage by Ar+-ion bombardment. The sensitivity of the compounds to bombardment, as measured by the relative increase in resistance for a given ion dose, increases in the following order: Pd2Si, Pt2Si, PdSi, Ni2Si, PtSi, NiSi, NiSi2. The heat of formation per metal atom, which is believed to be correlated with the degree of covalent bonding, increases in the same order. In experiments on films of Pd2Si, PtSi, and NiSi2, the difficulty in removing bombardment damage by thermal annealing was found to increase in the same order as the sensitivity to bombardment.This publication has 6 references indexed in Scilit:
- Channeled ion implantation through metallic filmsJournal of Vacuum Science and Technology, 1979
- Ion-beam-induced formation of the PdSi silicideApplied Physics Letters, 1979
- Channeling studies of radiation damage in metal-silicidesApplied Physics Letters, 1978
- Chemical Bonding and Structure of Metal-Semiconductor InterfacesPhysical Review Letters, 1975
- The growth and transformation of Pd2Si on (111), (110) and (100) SiThin Solid Films, 1973
- Stability of Solid Phases in the Ternary Systems of Silicon and Carbon with Rhenium and the Six Platinum MetalsJournal of the American Ceramic Society, 1962