Interfacial electron transfer as a significant step in photoelectrochemical reactions on some semiconductors
- 1 February 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (2) , 808-810
- https://doi.org/10.1063/1.328847
Abstract
Photoelectrochemical kinetics at the semiconductor-solution interface has been considered in all treatments in the literature, except one, to be rate controlled by processes inside the semiconductor. Evidence is presented which suggest that, at least for cathodic reactions on p-CdTe, the rate determining step is interfacial electron transfer, and a part of the total potential difference at the interface exists in the Helmholtz layer. Journal of Applied Physics is copyrighted by The American Institute of PhysicsThis publication has 7 references indexed in Scilit:
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