Implantation of dopants into indium phosphide

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Abstract
Seven donors (Si, S, Ge, Se, Sn, Te, and Pb) and nine acceptors (Be, Mg, Cr, Mn, Fe, Cu, Zn, Cd, and Hg) have been implanted into liquid-encapsulated Czochralski InP(Fe). For each dopant, the first four moments of the density profile have been extracted by fitting Pearson IV distributions to secondary ion mass spectrometry data. The results suggest that, when implanting into indium phosphide at reduced energies not too far from 1, the mean will be 1/5 larger than the theoretical prediction and the standard deviation will be twice the theoretical prediction.