The Design and Evaluation of GaAs Power MESFETs
- 1 October 1975
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 291-295
- https://doi.org/10.1109/euma.1975.332210
Abstract
Two power MESFET device structures capable of providing in excess of 1 Watt RF output power in S-band have been fabricated using established small signal MESFET technology. Power added efficiencies of 30%, gains > 8 dB and 1 dB compression powers greater than 1 Watt have been measured. The fabrication and characteristics of these devices will be described and experimental results presented. A beam lead package which makes thermal contact with the top and bottom faces of the MESFET chip will be described as will a technique for the surface thermal profiling of chips using nematic liquid crystals.Keywords
This publication has 1 reference indexed in Scilit:
- A surface temperature limit detector using nematic liquid crystals with an application to microcircuitsJournal of Physics E: Scientific Instruments, 1974