Plasma polymerized methyl-methacrylate as an electron-beam resist

Abstract
Plasma polymerized methyl-methacrylate thin film was formed on a glass substrate coated with chromium as a resist for electron-beam lithography. The polymerizations were conducted at two discharge frequencies of 13.56 MHz and 5 KHz using a capacitively coupled discharge electrode system in a bell-jar-type reactor. Delineations were carried out using an electron beam whose diameter and acceleration voltage were 0.5 μm and 20 kV, respectively. As a test pattern, 25 pairs of parallel lines and spaces each having a 10-μm width were delineated in a rectangular area of 0.5×0.5 mm2. Each line of 10-μm width was depicted by sweeping over using the electron beam with 20 repetitions. The patterns were developed on the chromium by CCl4 plasma etching.

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