Plasma polymerized methyl-methacrylate as an electron-beam resist
- 1 July 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (7) , 3938-3941
- https://doi.org/10.1063/1.328170
Abstract
Plasma polymerized methyl-methacrylate thin film was formed on a glass substrate coated with chromium as a resist for electron-beam lithography. The polymerizations were conducted at two discharge frequencies of 13.56 MHz and 5 KHz using a capacitively coupled discharge electrode system in a bell-jar-type reactor. Delineations were carried out using an electron beam whose diameter and acceleration voltage were 0.5 μm and 20 kV, respectively. As a test pattern, 25 pairs of parallel lines and spaces each having a 10-μm width were delineated in a rectangular area of 0.5×0.5 mm2. Each line of 10-μm width was depicted by sweeping over using the electron beam with 20 repetitions. The patterns were developed on the chromium by CCl4 plasma etching.This publication has 12 references indexed in Scilit:
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