A hydrogen-sensitive Pd-gate MOS transistor
- 1 September 1975
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9) , 3876-3881
- https://doi.org/10.1063/1.322185
Abstract
An n-channel MOS transistor with palladium gate was fabricated. The threshold voltage of this transistor was found to depend on the partial pressure of hydrogen in the ambient atmosphere. At a device temperature of 150 °C, 10 ppm hydrogen in air is easily detected, and in nitrogen or argon the sensitivity is considerably larger. A model, based on hydrogen adsorption on the palladium–silicon dioxide interface, is proposed. This model explains the device behavior and is also able to predict the absolute sensitivity for hydrogen in argon.This publication has 1 reference indexed in Scilit:
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975