Dual electron injector structure

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Abstract
Experimental results are presented which show for the first time that stacked chemically vapor‐deposited insulator combinations such as Si‐rich‐SiO2–SiO2–Si‐rich‐SiO2 sandwiched between Si or metal electrodes can be tailored to give any desired injection current characteristic for positive and negative voltage biases. The Si‐rich‐SiO2–SiO2 interfaces give enhanced electron injection into the SiO2 layer. By modifing this interface and the Si‐rich SiO2 layer (for example, by changing its Si content), current voltage characteristics for each of the two interfaces of the Si‐rich SiO2 injecting material with the SiO2 layer can be modified as desired. These dual electron injector structures DEIS’s are discussed with respect to optimizing the write and erase characteristics of nonvolatile semiconductor memories using a floating polycrystalline‐silicon storage layer with a DEIS sandwiched in between it and a control gate.