Lateral solid phase epitaxy in selectively P-doped amorphous Si films
- 17 November 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (20) , 1363-1365
- https://doi.org/10.1063/1.97325
Abstract
A selective doping method of P atoms is proposed in lateral solid phase epitaxy (L-SPE) of amorphous Si films, in which L-SPE mainly proceeds along the P-doped regions and active devices are fabricated in the undoped regions. It was found that diffusion of P atoms into the undoped region was negligible during L-SPE growth at 600 °C for about 20 h. Usefulness of this method was demonstrated by fabricating metal-oxide-semiconductor field-effect transistors in the films, in which the P-doped regions were used as the source and drain regions and the undoped region was used as a channel between them.Keywords
This publication has 7 references indexed in Scilit:
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si FilmsJapanese Journal of Applied Physics, 1986
- Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substratesApplied Physics Letters, 1986
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO2 PatternsJapanese Journal of Applied Physics, 1985
- Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantationApplied Physics Letters, 1985
- Amorphous-Si/crystalline-Si facet formation during Si solid-phase epitaxy near Si/SiO2 boundaryJournal of Applied Physics, 1984
- Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patternsApplied Physics Letters, 1983
- Solid-phase lateral epitaxy of chemical-vapor-deposited amorphous silicon by furnace annealingJournal of Applied Physics, 1983