1.3 µm high-power BH laser on p-InP substrates
- 1 June 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 21 (6) , 619-622
- https://doi.org/10.1109/jqe.1985.1072691
Abstract
In our fabrication of a 1.3 μm band high-power BH laser on a p-type InP substrate, 79 mW CW laser output was obtained, and the spectrum width was 10 nm at 50 mW; it also obtained a high-power pulse output of more than 200 mW at 30 ns pulse width. It shows high-speed pulse response at 2 Gbits/s. These CW and pulse lasing characteristics are reported in this paper, and we also show the output and threshold current distribution of about 1000 samples from six wafers. This high-power laser is very useful for light sources of measuring instruments.Keywords
This publication has 1 reference indexed in Scilit:
- High power output InGaAsP/InP buried heterostructure lasersElectronics Letters, 1981