Surface recombination velocity in a silicon optical waveguide
- 1 May 1983
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 31 (1) , 45-49
- https://doi.org/10.1007/bf00617187
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Effect of electron-hole scattering on ambipolar diffusion in semiconductorsPhysical Review B, 1980
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Optical determination of free carriers parameters in an epitaxial GaAs layerApplied Physics A, 1976
- Surface lifetime degradation in Si and Ge under low energy electron irradiationSurface Science, 1973
- Measurements of the Average Energy Per Electron-Hole Pair Generation in Silicon between 5-320°KIEEE Transactions on Nuclear Science, 1972
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- TOTAL INTERNAL REFLECTION AND ITS APPLICATION TO SURFACE STUDIESAnnals of the New York Academy of Sciences, 1963