1.3 µm large spot-size laser diodes with laterallytapered active layer
- 17 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (17) , 1439-1440
- https://doi.org/10.1049/el:19950965
Abstract
1.3 µm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 µm show singlemode-fibre coupling losses of <3 dB, threshold currents of 4.7 and 18.0 mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively.Keywords
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