Carrier lifetimes in low-resistivity GaAs upon electron bombardment and annealing
- 16 April 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 10 (2) , 479-485
- https://doi.org/10.1002/pssa.2210100216
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Recovery of low temperature electron irradiation-induced damage inn-type gaasRadiation Effects, 1970
- Change in Thermal Conductivity upon Low-Temperature Electron Irradiation: GaAsPhysical Review B, 1964
- The displacement energy in GaAsProceedings of the Physical Society, 1964
- Role of Traps in the Photoelectromagnetic and Photoconductive EffectsPhysical Review B, 1958
- Photoconductive and Photoelectromagnetic Effects in InSbJournal of Applied Physics, 1956
- Annealing of Bombardment Damage in a Diamond-Type Lattice: TheoreticalPhysical Review B, 1953