A 0.25-watt three-stage Q-band MESFET monolithic power amplifier
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 161-164
- https://doi.org/10.1109/gaas.1991.172661
Abstract
A monolithic, three-stage, 0.25-W, Q-band MESFET power amplifier has been developed. The FETs of the amplifier use 0.25-micron, e-beam defined gates and MOCVD grown active layers. The amplifier has shown a small-signal gain of from 10-11 dB in the frequency range of 43 to 46 GHz. The RF output power is at least 24 dBm at 3-dB compression.<>Keywords
This publication has 2 references indexed in Scilit:
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