Mechanisms of strained island formation in molecular-beam epitaxy of InAs on GaAs(100)
- 1 July 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (4) , 2568-2573
- https://doi.org/10.1116/1.587803