Lateral optical confinement of the heterostructure semiconductor Raman laser
- 2 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (18) , 1457-1458
- https://doi.org/10.1063/1.98656
Abstract
This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 μm and Al0.1Ga0.9P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.Keywords
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