Approach to the Metallic State as Obtained from Optical and Electrical Measurements
- 1 June 1963
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 38 (11) , 2721-2724
- https://doi.org/10.1063/1.1733579
Abstract
Electrical resistance measurements have been made on I2, Se, AgI, and SnI4. Sublimed single crystals of iodine were studied both parallel and perpendicular to the planes containing the molecules. Perpendicular to the molecular plane one obtains metallic behavior above 160 kbar; parallel to the plane of the molecules above 220 kbar. Selenium becomes metallic at 130 kbar. In the region where both optical gap and resistance measurements could be obtained, the agreement is good. SnI4 becomes metallic above 185 kbar in reasonable agreement with extrapolated optical‐gap data. AgI shows apparently ionic conductivity below 70 kbar. At 97 kbar there is a sharp rise in resistance which corresponds quite quantitatively to the observed increase in optical gap. The high‐pressure phase is a semiconductor with activation energy of about 0.5 eV, in reasonable agreement with the optical gap for α=0.Keywords
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