GaAs MESFET Technology based MMICs for Millimetre-Wave Front-ends

1 September 1994

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 534-541
https://doi.org/10.1109/euma.1994.337265

Abstract

The feasability of monolithic millimetre-wave front-ends based on a GaAs MESFET technology has been demonstrated. Different specific MMIC circuit functions have been fabricated using a 0.25 μm GaAs MESFET technology. Mixer, doubler and switch MMIC circuits have been realised using Schottky diodes as active elements. The diode performances have been improved by including a selective n+ buried layer for reduction of the series resistance. Voltage controlled oscillator and amplifier have been fabricated using the same technology without n+ layer.

Keywords

GALLIUM ARSENIDE
MMICS
SCHOTTKY DIODES
SWITCHES
FINGERS
ELECTRICAL RESISTANCE MEASUREMENT
MESFET CIRCUITS
APPROPRIATE TECHNOLOGY
VOLTAGE
CAPACITANCE MEASUREMENT

This publication has 1 reference indexed in Scilit:

A monolithic 60 GHz diode mixer and IF amplifier in compatible technology
IEEE Transactions on Microwave Theory and Techniques, 1989