Edge-effects correction in depth profiles obtained by ion-beam sputtering
- 15 January 1980
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 168 (1-3) , 399-404
- https://doi.org/10.1016/0029-554x(80)91283-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Absolute photon yields in the sputter-induced optical emission processApplied Physics Letters, 1978
- Secondary ion quadrupole mass spectrometer for depth profiling—design and performance evaluationReview of Scientific Instruments, 1978
- Hydrogen and fluorine profiles in GdF3 films measured by sputter-induced optical emissionApplied Physics Letters, 1978
- Ion-beam-induced atomic mixingJournal of Applied Physics, 1977
- In situ spectrochemical analysis of solid surfaces by ion beam sputteringAnalytical Chemistry, 1977
- A simple electronic aperture for rastered-beam depth profilesInternational Journal of Mass Spectrometry and Ion Physics, 1976
- An electronic aperture for in-depth analysis of solids with an ion microprobeInternational Journal of Mass Spectrometry and Ion Physics, 1976
- Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide filmsJournal of Vacuum Science and Technology, 1976
- A cratering analysis for quantitative depth profiling by ion beam sputteringSurface Science, 1975
- Secondary−ion mass spectrometry and its use in depth profilingJournal of Vacuum Science and Technology, 1975