The influence of nitride thickness variations on the switching speed of MNOS memory transistors
- 1 November 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (11) , 1328-1331
- https://doi.org/10.1109/t-ed.1978.19275
Abstract
The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.Keywords
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