Instrument for Measuring the Magnetomicrowave Kerr Effect in Semiconductors
- 1 October 1963
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 34 (10) , 1129-1132
- https://doi.org/10.1063/1.1718150
Abstract
An instrument is described which measures the transport properties of high‐conductivity semiconductors. It employs a microwave turnstile junction to determine the complex orthogonal amplitudes of the reflected waves from a magnetized sample. The data are obtained by a double‐bridge technique of high sensitivity. Some experimental results on germanium at room temperature are presented.Keywords
This publication has 4 references indexed in Scilit:
- Dependence of the Free-Carrier Faraday Ellipticity in Semiconductors on Scattering MechanismsPhysical Review B, 1961
- Microwave Faraday Effect in Silicon and GermaniumPhysical Review B, 1960
- The Faraday effect in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Faraday Effect in Germanium at Room TemperaturePhysical Review B, 1955