Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low Temperatures

Publisher Website
Google Scholar
Abstract
Thin films are deposited on silicon substrates by the reaction of and N2 in an rf glow discharge at substrate temperatures between 25° and 500°C. These films are hereafter referred to as “nitrogen‐ films.” At optimum growth conditions an index of refraction of 2, a breakdown field strength of 107 V/cm, a flatband surface charge of , and a very high stability against bias temperature stress is obtained. With changing concentration the stoichiometry of the nitride films can be varied between highly nitrogen‐rich and silicon‐rich films resulting in a corresponding wide variation of physical and electrical film properties. Hysteresis‐free and highly stable varactors can be accomplished by an in situ glow discharge exposure in H2 and N2 atmosphere, respectively.

This publication has 0 references indexed in Scilit: