Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations

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1 August 1973

journal article
Published by Elsevier in Solid State Communications

Vol. 13 (3) , 257-263
https://doi.org/10.1016/0038-1098(73)90586-3

Abstract

No abstract available

Keywords

This publication has 7 references indexed in Scilit:

Constant Energy Surfaces of n‐Type Bismuth Selenide from the Shubnikov‐de Haas Effect
Physica Status Solidi (b), 1971
Anistropy of the Constant-Energy Surfaces in $n$ -Type Bi ${}_{2}{Te}_{3}$ and ${Bi}_{2}$ ${Se}_{3}$ from Galvanomagnetic Coefficients
Physical Review B, 1970
Abhängigkeit der effektiven Masse von der Ladungsträgerkonzentration im Bi2Se3
The European Physical Journal A, 1969
de Haas-van Alphen Effect in $n$ -Type ${Bi}_{2}$ ${Te}_{3}$
Physical Review B, 1968
New Method for Computing the Weak-Field Hall Coefficient
Physical Review B, 1968
Galvanomagnetic Effects in Bismuth Selenide Bi₂Se₃
Journal of the Physics Society Japan, 1961
Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
Physical Review B, 1956