The preferential trapping of interstitials at dislocations

Publisher Website
Google Scholar
Abstract
The growth of microscopic voids during the irradiation of metals is due to the preferential drift of interstitials to dislocations, thus allowing the excess vacancies to accumulate at voids. The preference arises from the stronger interaction between a dislocation and an interstitial than between a dislocation and a vacancy. This interaction is evaluated explicitly for several pure metals and the corresponding dislocation preference is calculated from a solution of the appropriate diffusion equation which includos the dislocation-point defect interaction term. The values of the dislocation preference calculated here are considerably larger than the values deduced from experimental results.