Thickness dependence of oxide breakdown under high field and current stress
- 12 January 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2) , 104-106
- https://doi.org/10.1063/1.97867
Abstract
The integrity of gate oxides is shown to be a strong function of both oxide thickness and applied field and current strength. Thin gate oxides show longer lifetime under low field and current stress. However, high field and current induced intrinsic breakdown is inversely proportional to oxide thickness. It is also found that the effect of polycrystalline silicon and silicon dioxide interface roughness on oxide charge‐to‐breakdown is independent of oxide thickness and stressing field and current level. A model of positive charge generation and recombination is applied to explain the experimental data.Keywords
This publication has 5 references indexed in Scilit:
- Substrate hole current and oxide breakdownApplied Physics Letters, 1986
- SiO2-induced substrate current and its relation to positive charge in field-effect transistorsJournal of Applied Physics, 1986
- Rapid thermal processing of thin gate dielectrics. Oxidation of siliconIEEE Electron Device Letters, 1985
- Electrical Breakdown in Thin Gate and Tunneling OxidesIEEE Journal of Solid-State Circuits, 1985
- High field current induced-positive charge transients in SiO2Journal of Applied Physics, 1983