Electron dynamics in short-channel InP field-effect transistors
- 4 April 1974
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 10 (7) , 115-116
- https://doi.org/10.1049/el:19740089
Abstract
The transient response of electrons to a high field in InP has been calculated by a Monte Carlo method. The results are compared with previously published results for GaAs, and used to indicate the performance that may be obtained in InP and GaAs microwave f.e.t.s.Keywords
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