PHOTOEMISSION FROM GaAs THIN FILMS
- 1 February 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (3) , 63-65
- https://doi.org/10.1063/1.1651900
Abstract
A technique is described for obtaining atomically clean GaAs surfaces by evaporating epitaxially a GaAs layer on the bulk crystal under ultrahigh vacuum. Photoemission sensitivities of 220 μA/lumen have been obtained, with high quantum yields in the near‐infrared region.Keywords
This publication has 4 references indexed in Scilit:
- Preparation of Epitaxial GaAs Films by Vacuum Evaporation of the ElementsJournal of Applied Physics, 1966
- Vacuum Thermal Decomposition of III–V Compound SurfacesJournal of Applied Physics, 1966
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965
- Structure of Oriented, Vapor-Deposited GaAs Films, Studied by Electron DiffractionJournal of Applied Physics, 1964