Influence of pressure and temperature on switching in vanadium pentoxide
- 1 December 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (12) , 5426-5431
- https://doi.org/10.1063/1.1662169
Abstract
The initial switch in polycrystalline V2O5 specimens (300–400 μ thick) at room temperature is associated with melting caused by power‐induced Joule heating and also with a color change from yellow‐orange to black. The resulting black material exhibits threshold switching. High‐pressure studies show a pressure dependence on threshold power for V2O5, and on threshold field for an amorphous chalcogenide. Low‐temperature studies indicate an increase in turnover power with decreasing temperature for V2O5. High‐temperature studies show that V2O5 melts with decreasing resistivity at about 690°C.This publication has 10 references indexed in Scilit:
- A study of switching in non-crystalline chalcogenide thin films at room and liquid nitrogen ambient temperatures using aluminum and molybdenum electrodesThin Solid Films, 1972
- Initiation of switching in VO2coplanar devicesIEEE Transactions on Electron Devices, 1971
- Technique for Detecting High‐Pressure Transitions in InsulatorsJournal of the American Ceramic Society, 1971
- Semiconductor ⇄ metal phase transitionsJournal of Solid State Chemistry, 1970
- Experimental results in amorphous semiconductor switching behaviorJournal of Non-Crystalline Solids, 1970
- Thermal filaments in vanadium dioxideIEEE Transactions on Electron Devices, 1969
- Preparation and properties of crystalline and amorphous vanadium pentoxideMaterials Research Bulletin, 1967
- Pressure Multiplication Effect in Opposed-Anvil ConfigurationsReview of Scientific Instruments, 1963
- Band Structure of Transition Metals and Their AlloysPhysical Review B, 1960
- Direct Cation- -Cation Interactions in Several OxidesPhysical Review B, 1960