Direct experimental evidence for a dominant hole trapping center in SIMOX oxides
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Radiation and Processing Induced Effects in SIMOX: A Spectroscopic StudyIEEE Transactions on Nuclear Science, 1987
- Electron spin resonance studies on buried oxide silicon-on-insulatorApplied Physics Letters, 1987
- EPR of defects in silicon-on-insulator structures formed by ion implantation. I. O+implantationJournal of Physics C: Solid State Physics, 1986