Morphology of copper precipitates characterizing lattice imperfection in EFG ribbon silicon
- 28 February 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (2) , 97-108
- https://doi.org/10.1016/0038-1101(83)90110-7
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- High speed EFG of wide silicon ribbonJournal of Crystal Growth, 1980
- Structural and electrical charaterization of crystallographic defects in silicon ribbonsJournal of Crystal Growth, 1980
- Factors influencing surface quality and impurity distribution in silicon ribbons grown by the capillary action shaping technique (CAST)Journal of Crystal Growth, 1980
- The growth of EFG silicon ribbonsJournal of Crystal Growth, 1977
- On the influence of microdefects on charge carriers in siliconPhysica Status Solidi (a), 1976
- Edge-defined, film-fed growth (EFG) of silicon ribbonsMaterials Research Bulletin, 1972
- Growth of controlled profile crystals from the melt: Part II - Edge-defined, film-fed growth (EFG)Materials Research Bulletin, 1971
- Growth of Wide, Flat Crystals of Silicon WebJournal of the Electrochemical Society, 1971
- Electrical Properties of Copper Segregates in Silicon P-N JunctionsJournal of the Electrochemical Society, 1965
- Study of Copper Precipitation Behavior in Silicon Single CrystalsJournal of the Electrochemical Society, 1961