Adsorption of H, CH3, CH2 and C2H2 on 2 × 1 restructured diamond (100): Theoretical study of structures, bonding, and migration
- 1 June 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 248 (3) , 369-381
- https://doi.org/10.1016/0039-6028(91)91183-x
Abstract
No abstract availableThis publication has 49 references indexed in Scilit:
- A flow-tube study of diamond film growth: methane versus acetyleneJournal of Materials Science Letters, 1990
- Current Issues and Problems in the Chemical Vapor Deposition of DiamondScience, 1990
- Diamond film synthesis in a chemically simplified systemApplied Physics Letters, 1989
- Diamond Growth at Low PressuresMRS Bulletin, 1989
- Diamond—Ceramic Coating of the FutureJournal of the American Ceramic Society, 1989
- Low-Pressure, Metastable Growth of Diamond and "Diamondlike" PhasesScience, 1988
- The Importance of the Positively Charged Surface for the Epitaxial Growth of Diamonds at Low PressureJapanese Journal of Applied Physics, 1987
- Epitaxial growth mechanism of diamond crystal in methane-hydrogen plasmaJournal of the American Chemical Society, 1986
- Oxygen and hydrogen on the surface of diamondNuclear Instruments and Methods in Physics Research, 1983
- The diamond surfaceSurface Science, 1977