Surface reactions on MOS structures
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (11) , 4888-4893
- https://doi.org/10.1063/1.1663149
Abstract
The morphology of surface reactions for Au/SiO2/Si structures has been studied as a function of environment. It was found that the reaction between thin gold film dots and thermally oxidized Si was strongly influenced by the partial pressure of oxygen. When samples are held at elevated temperatures (above 500 °C) in the dynamic vacuum, an apparent decomposition of the oxide film with subsequent migration of Au along the exposed silicon surface was observed. The migration was found to follow the crystallographic directions of the silicon. Reduction of the oxide was dependent on the presence of the Au layer as regions free of Au remained intact. The reaction as a function of time, temperature, SiO2 thickness, and ambient conditions has been studied using optical microscopy as well as electron microprobe, microscopy, and diffraction techniques.This publication has 4 references indexed in Scilit:
- Formation of silicon oxide over gold layers on silicon substratesJournal of Applied Physics, 1972
- Reflection Electron Diffraction of Gold-Diffused SiliconJapanese Journal of Applied Physics, 1972
- Eutectic decomposition in the goldsilicon systemMaterials Science and Engineering, 1971
- GOLD DIFFUSIVITIES IN SiO2 AND Si USING THE MOS STRUCTUREApplied Physics Letters, 1966