Theoretical study of strained InGaP quantum-well lasers
- 30 January 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (5) , 628-630
- https://doi.org/10.1063/1.114035
Abstract
The effects of biaxial compressive and tensile strains on the optical gain and threshold current density of 70 Å strained InGaP–In(AlGa)P quantum‐well lasers are studied theoretically. Due to strain effects on the density of states and optical dipole matrix elements, compressive strain produces the largest gain (TE) for carrier density N18 cm−3 while the TM mode gain of a tensile strained quantum well is the largest when N≳5×1018 cm−3. Calculated threshold current densities of compressive‐ and tensile‐strained quantum wells are both lower than unstrained case. For cavity length longer than 500 μm, a quantum well with compressive strain has the lowest threshold current density. In this case, calculated threshold density shows reasonable agreement with the experiment.Keywords
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