Photon generation in forward-biased silicon p-n junctions
- 1 December 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (12) , 460-462
- https://doi.org/10.1109/edl.1983.25802
Abstract
Photons are generated by forward biasing a silicon p-n junction at 10-5∼ 10-4quantum efficiency through radiative recombination. At large distances from the forward-biased junction, leakage currents of magnitudes significant for some VLSI circuits can appear due to the substrate minority carriers generated by the photons. The effective decay length of the measured leakage current is about several hundred to one thousand micrometers. The effects of forward biasing an input node or a parasitic lateral bipolar transistor are, therefore, longer ranged than commonly assumed.Keywords
This publication has 0 references indexed in Scilit: