Thermally and electrically isolated single crystal silicon structures in CMOS technology
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (10) , 399-401
- https://doi.org/10.1109/55.320981
Abstract
Thermally and electrically isolated single crystal silicon structures have been fabricated using a post-processing anisotropic tetramethyl ammonium hydroxide (TMAH) electrochemical etch. The process was carried out on CMOS circuits fabricated by a commercial foundry. Since the etch consists of a single micromachining step performed on packaged and bonded dice, this technique has the potential for cost-effective prototyping and production of integrated sensors and circuits.Keywords
This publication has 10 references indexed in Scilit:
- A thermally isolated microstructure suitable for gas sensing applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Numerical optimisation of flow-rate microsensors using circuit simulation toolsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A silicon-diode-based infrared thermal detector arraySensors and Actuators A: Physical, 1993
- Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processingIEEE Electron Device Letters, 1993
- Anisotropic etching of silicon in TMAH solutionsSensors and Actuators A: Physical, 1992
- Thermoelectric AC power sensor by CMOS technologyIEEE Electron Device Letters, 1992
- Silicon gas flow sensors using industrial CMOS and bipolar IC technologySensors and Actuators A: Physical, 1991
- A new approach for the fabrication of micromechanical structuresSensors and Actuators, 1989
- Analysis of noise margin and speed of GaAs MESFET DCFL using UM-SPICEIEEE Transactions on Electron Devices, 1986
- Monolithic temperature stabilized voltage reference with 0.5 ppm/ ° driftPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976