Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis
- 28 October 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (18) , 2671-2673
- https://doi.org/10.1063/1.117554
Abstract
In situ, real‐time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time‐of‐flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion‐beam sputter‐deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi2O2)2+layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors.Keywords
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