Dielectric Relaxation Behavior of Dislocations in Semiconductors
- 16 January 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 81 (1) , 381-390
- https://doi.org/10.1002/pssa.2210810143
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Anisotropic conductivity of CdS after plastic deformation and conduction along dislocations: II. Measurements on a microscopic scalePhysica Status Solidi (a), 1981
- Anisotropic conductivity of CdS after plastic deformation and conduction along dislocations. I. Macroscopic measurementsPhysica Status Solidi (a), 1981
- Electron-microscopic study of dislocation structure in deformed single crystals of CdSPhysica Status Solidi (a), 1980
- Dielectric Approach to Suspensions of Ellipsoidal Particles Covered with a Shell in Particular Reference to Biological CellsJapanese Journal of Applied Physics, 1980
- Photoluminescence at dislocations in GaAs and InPJournal of Applied Physics, 1979
- Electronic transport and optical properties of plastically deformed CdSPhysical Review B, 1979
- Microwave conductivity measurements in CdTePhysica Status Solidi (a), 1979
- Investigation of the energy spectrum and kinetic phenomena in dislocated Si crystals. II. Microwave conductivityPhysica Status Solidi (a), 1977
- Pseudo-One-Dimensional Conductor-Plastically Deformed CdSPhysical Review Letters, 1974
- Generalized approach to multiphase dielectric mixture theoryJournal of Applied Physics, 1973