Influence of carrier velocity saturation in the unswept layer on the efficiency of avalanche transit time diodes

1 June 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 59 (6) , 1032-1033
https://doi.org/10.1109/PROC.1971.8323

Abstract

Due to velocity saturation of the carriers, the series resistance caused by the unswept layer in avalanche transit time diodes increases with increasing ac voltage on the diode. In GE npp⁺diodes this effect is found to influence the efficiency considerably and the same may be true for Si npp⁺diodes.

Keywords

SCHOTTKY DIODES
VOLTAGE
GALLIUM ARSENIDE
GUNN DEVICES
CONDUCTIVITY
CURRENT MEASUREMENT
ELECTRIC FIELDS
STEADY-STATE
TEMPERATURE
LATTICES

This publication has 0 references indexed in Scilit: