Photoconductivity in indium antimonide at 10$middot$6 $\mu$m wavelength
- 1 February 1968
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 1 (2) , 149-154
- https://doi.org/10.1088/0022-3727/1/2/302
Abstract
Photoconductivity has been observed in indium antimonide at 106 μm wavelength using a high-power Q-switched laser as a source, and is ascribed to a two-photon absorption process. Variation in photoconductivity over the temperature range 30-300°K has been studied and comparison with the response at 53 μm indicates that the laser radiation substantially reduces the carrier lifetime in indium anti-monide.Keywords
This publication has 8 references indexed in Scilit:
- Multiphoton Magneto-Optical Resonance in PbTe and InSbPhysical Review Letters, 1966
- Optical Harmonic Generation in the Infrared Using a CLaserPhysical Review Letters, 1966
- Hot Electrons in Indium AntimonidePhysical Review B, 1963
- Carrier Lifetime in Indium AntimonidePhysical Review B, 1961
- Optical Absorption in Pure Single Crystal InSb at 298° and 78°KPhysical Review B, 1959
- Recombination Processes in-Type Indium AntimonidePhysical Review B, 1959
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Absorption and Dispersion of Indium AntimonideProceedings of the Physical Society. Section B, 1957