Molecular beam epitaxial growth of high-quality GaAs on Si using a high-temperature i n s i t u annealing process
- 1 March 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 8 (2) , 250-253
- https://doi.org/10.1116/1.584820
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: