A 12-dB high-gain monolithic distributed amplifier
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (12) , 2073-2078
- https://doi.org/10.1109/T-ED.1986.22871
Abstract
By reducing gate and drain line loss associated with the active elements of a distributed amplifier, significant gain improvements are possible. Loss reduction is achieved in a novel monolithic distributed amplifier by replacing the common-source FET's of the conventional design with cascode elements having a gate length of one-quarter micron. A record gain of over 10 dB from 2 to 18 GHz and a noise figure of 4 dB at 7 GHz have been achieved on a working amplifier. Details of the design and fabrication process are described.Keywords
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