Schottky drain microwave GaAs field effect transistors
- 5 February 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (3) , 107-108
- https://doi.org/10.1049/el:19810076
Abstract
A technology is described for the fabrication of Schottky drain microwave GaAs FETs. Preliminary DC and microwave results are given together with expected advantages of this new FET structure.Keywords
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