Electrothermal Initiation of an Electronic Switching Mechanism in Semiconducting Glasses
- 1 May 1970
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (6) , 2675-2681
- https://doi.org/10.1063/1.1659281
Abstract
An analysis of the switching mechanism in semiconducting glasses is given which indicates that the actual switching involves electronic processes which prevent a thermal runaway. The rapid and reversible transition between the highly resistive and conductive states can have a thermal origin from Joule's heating of a current channel. Double tunneling, forced by the characteristic temperature profile, and current‐density saturation are suggested as an explanation of the characteristics in the conductive state.This publication has 11 references indexed in Scilit:
- Semiconductivity of GlassesPhysical Review Letters, 1970
- Remarks to the ovshinsky effectPhysica Status Solidi (a), 1970
- Conduction and Electrical Switching in Amorphous Chalcogenide Semiconductor FilmsPhysical Review B, 1969
- The Conduction Mechanism of Self‐Compensated Highly Disordered Semiconductors (A Possible Model for Semiconducting Glasses)Physica Status Solidi (b), 1969
- The Conduction Mechanism of Highly Disordered Semiconductors (A Possible Model for Semiconducting Glasses) II. Influence of Charged DefectsPhysica Status Solidi (b), 1969
- Temperature Distribution and Its Kinetics in a Semiconducting SandwichPhysica Status Solidi (b), 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Electrons in disordered structuresAdvances in Physics, 1967
- The Instability of Negative Differential ResistancePhysica Status Solidi (b), 1966
- Vorprozesse des Wärmedurchschlages. II. Zur Theorie der inhomogenen Stromverteilung bei hohen elektrischen LeistungenPhysica Status Solidi (b), 1961