Frequency/temperature characteristics of Gunn devices

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Abstract
The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has limited the application of these devices. The letter outlines a program of experiments and computer simulations aimed at achieving an understanding of the basic ∂f/∂T mechanism and thus producing a deep stable oscillator. Our simulations successfully predict observed trends in the ∂f/∂T behaviour of Gunn devices with both alloyed metal and n+ regrown contacts. The results of our study show that stable oscillators with a small loaded Q factor and near maximum power output are realisable.

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