Effects of film thickness and substrate temperature on DC conduction in thin amorphous films of MoO3

Publisher Website
Google Scholar
Abstract
DC conduction in MIM sandwich structures based on substoichiometric amorphous dielectric films of MoO3, prepared by vacuum evaporation in the thickness range 100-500nm were studied. Some samples 400nm thick were studied in the substrate deposition temperature range 293-543 K. A 100 nm thick sample was studied as a function of temperature in the range 193-393 K. It was difficult to distinguish between the Poole-Frenkel and Schottky high-field conduction mechanisms. The increase in conductivity due to increasing thickness is attributed to the increasing number of oxygen vacancies present in the samples. Heating the substrates in vacuum at 473 K or above results in the formation of a defect band near the Fermi level which is associated with the coloration of the samples and in the formation of reduced state species. The greatly enhanced conductivity in the blue samples is due to the higher mobility of the electrons in the defect band and the conduction band.

This publication has 20 references indexed in Scilit: