A Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI

• 1 January 1991
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 53-54
• https://doi.org/10.1109/vlsit.1991.705986

Abstract

Keywords

• BIPOLAR TRANSISTORS
• BONDING
• FABRICATION
• PARASITIC CAPACITANCE
• SILICON COMPOUNDS
• MOS DEVICES
• BORON
• CUTOFF FREQUENCY
• INDIUM TIN OXIDE
• LABORATORIES