The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAs

Publisher Website
Google Scholar
Abstract
The role of the gallium antisite defect, GaAs, in the activation process of implanted Si in undoped GaAs was investigated by Hall effect and photoluminescence measurements. The activation efficiency increased with increase of the annealing temperature, but an efficiency reduction was observed above 900°C for 0 s hold time annealing and above 850°C for 20 min annealing. Moreover, p-type conversion took place above 900°C for 20 min annealing. It was found from photoluminescence measurements that at high temperatures the density of GaAs was increased to reduce the activation efficiency and eventually to convert the material to p-type. It is pointed out that the density of GaAs in semi-insulating GaAs must be low to attain high activation efficiency. It was also found that co-operative phenomena among C, Si and Ga that occupy arsenic sites appeared at rather high temperatures.