A fully integrated 1.9-GHz CMOS low-noise amplifier
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 8 (8) , 293-295
- https://doi.org/10.1109/75.704599
Abstract
A fully integrated 1.9 GHz CMOS low-noise amplifer (LNA) has been implemented in a 0.8 μm CMOS technology. For low-noise performance, the amplifier employs high-quality spiral inductors with a duality factor of 8.5-12.5, and device layout and bias condition of the active devices were optimized for low-noise conditions. This amplifier showed a noise figure of 2.8 dB with a forward gain of 15 dB at current consumption of 15 mA. To the authors' knowledge, this represents the lowest noise figure reported to date for a fully integrated CMOS LNA operating at 1.9 GHz.Keywords
This publication has 6 references indexed in Scilit:
- A 1.5 V, 1.5 GHz CMOS low noise amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 900 MHz/1.8 GHz CMOS receiver for dual band applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 115 mW CMOS GPS receiverPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High Q microwave inductors in CMOS double-metal technology and its substrate bias effects for 2 GHz RF ICs applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 1.9 GHz wide-band IF double conversion CMOS integrated receiver for cordless telephone applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 12-mW wide dynamic range CMOS front-end for a portable GPS receiverIEEE Journal of Solid-State Circuits, 1997