VBIC model applicability and extraction procedure for InGap/GaAs HBT

13 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2, 716-721
https://doi.org/10.1109/apmc.2001.985472

Abstract

In this paper the applicability of VBIC-95 for InGaP/GaAs HBT modelling is examined. An extraction procedure is presented for parameters responsible for saturation currents, thermal resistance, internal base resistance and forward transit time. The resulting VBIC model was verified against large-signal DC and AC measurements.

Keywords

GALLIUM ARSENIDE
HETEROJUNCTION BIPOLAR TRANSISTORS
SEMICONDUCTOR PROCESS MODELING
THERMAL RESISTANCE
DOPING
KIRK FIELD COLLAPSE EFFECT
TOPOLOGY
ELECTRICAL RESISTANCE MEASUREMENT
SPICE
BIPOLAR TRANSISTORS

This publication has 2 references indexed in Scilit:

Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models
IEEE Transactions on Electron Devices, 2000
VBIC95, the vertical bipolar inter-company model
IEEE Journal of Solid-State Circuits, 1996